JPH0437598B2 - - Google Patents

Info

Publication number
JPH0437598B2
JPH0437598B2 JP58053621A JP5362183A JPH0437598B2 JP H0437598 B2 JPH0437598 B2 JP H0437598B2 JP 58053621 A JP58053621 A JP 58053621A JP 5362183 A JP5362183 A JP 5362183A JP H0437598 B2 JPH0437598 B2 JP H0437598B2
Authority
JP
Japan
Prior art keywords
layer
optical waveguide
forming
semiconductor
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58053621A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59181587A (ja
Inventor
Osamu Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5362183A priority Critical patent/JPS59181587A/ja
Publication of JPS59181587A publication Critical patent/JPS59181587A/ja
Publication of JPH0437598B2 publication Critical patent/JPH0437598B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP5362183A 1983-03-31 1983-03-31 半導体レーザ素子の製造方法 Granted JPS59181587A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5362183A JPS59181587A (ja) 1983-03-31 1983-03-31 半導体レーザ素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5362183A JPS59181587A (ja) 1983-03-31 1983-03-31 半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
JPS59181587A JPS59181587A (ja) 1984-10-16
JPH0437598B2 true JPH0437598B2 (en]) 1992-06-19

Family

ID=12947973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5362183A Granted JPS59181587A (ja) 1983-03-31 1983-03-31 半導体レーザ素子の製造方法

Country Status (1)

Country Link
JP (1) JPS59181587A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0423378A (ja) * 1990-05-14 1992-01-27 Matsushita Electron Corp 半導体レーザ装置
JPH07111357A (ja) * 1993-10-05 1995-04-25 Mitsubishi Electric Corp 半導体レーザの製造方法
KR100705738B1 (ko) 2005-09-16 2007-04-09 강봉섭 전해질이 분할된 리튬 전지
KR100874896B1 (ko) 2007-01-04 2008-12-19 한국과학기술연구원 좁은　광퍼짐을　갖는　반도체 레이저

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164588A (en) * 1980-05-23 1981-12-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light amplifier
JPS57152178A (en) * 1981-03-17 1982-09-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting device with super lattice structure
JPS57155790A (en) * 1981-03-23 1982-09-25 Hitachi Ltd Optical transmission module

Also Published As

Publication number Publication date
JPS59181587A (ja) 1984-10-16

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